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3D assembly of carbon nanotubes for fabrication of field-effect transistors through nanomanipulation and electron-beam-induced deposition
- Source :
- Journal of Micromechanics and Microengineering. 27:105007
- Publication Year :
- 2017
- Publisher :
- IOP Publishing, 2017.
-
Abstract
- Three-dimensional carbon nanotube field-effect transistors (3D CNTFETs) possess predictable characteristics that rival those of planar CNTFETs and Si-based MOSFETs. However, due to the lack of a reliable assembly technology, they are rarely reported on, despite the amount of attention they receive. To address this problem, we propose the novel concept of a 3D CNTFET and develop its assembly strategy based on nanomanipulation and the electron-beam-induced deposition (EBID) technique inside a scanning electron microscope (SEM). In particular, the electrodes in our transistor design are three metallic cuboids of the same size, and their front, top and back surfaces are all wrapped up in CNTs. The assembly strategy is employed to build the structure through a repeated basic process of pick-up, placement, fixing and cutting of CNTs. The pick-up and placement is performed through one nanomanipulator with four degrees of freedom. Fixing is carried out through the EBID technique so as to improve the mechanical and electrical characteristics of the CNT/electrodes connection. CNT cutting is undertaken using the typical method of electrical breakdown. Experimental results showed that two CNTs were successfully assembled on the front sides of the cubic electrodes. This validates our assembly method for the 3D CNTFET. Also, when contact resistance was measured, tens of kilohms of resistance was observed at the CNT-EBID deposition-FET electrodes junction.. This manifests the electrical reliability of our assembly strategy.
- Subjects :
- 010302 applied physics
Materials science
Mechanical Engineering
Transistor
Contact resistance
Electrical breakdown
Nanotechnology
02 engineering and technology
Carbon nanotube
021001 nanoscience & nanotechnology
01 natural sciences
Electronic, Optical and Magnetic Materials
law.invention
Carbon nanotube field-effect transistor
Mechanics of Materials
law
0103 physical sciences
MOSFET
Field-effect transistor
Electrical and Electronic Engineering
Electron beam-induced deposition
0210 nano-technology
Subjects
Details
- ISSN :
- 13616439 and 09601317
- Volume :
- 27
- Database :
- OpenAIRE
- Journal :
- Journal of Micromechanics and Microengineering
- Accession number :
- edsair.doi...........0d24db8af8184afae2b617155a120be5