A compact model of resistive switching devices

Authors :: Bin Gao
B. Chen
Q.Y. Jun
Jinfeng Kang
Xiaozhe Liu
L. F. Liu
Zhang Fangni
R.Q. Han
Kangliang Wei
Yuansha Chen
Source :: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.
Publication Year :: 2010
Publisher :: IEEE, 2010.
Abstract: In this paper a compact model both for bipolar and unipolar resistive switching device is proposed. Basic I–V characteristics of RRAM are easily and correctly represented by this model. The model is verified by the bipolar RRAM experiment results. The model can be used as simple and fast tool to design and optimize RRAM.

Subjects :: Computer science
business.industry
Simple (abstract algebra)
Voltage control
Resistive switching
Electronic engineering
Electrical engineering
Process control
business
Resistive random-access memory

Database :: OpenAIRE
Journal :: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
Accession number :: edsair.doi...........0d8709addfb190ed0541bd34d2def168
Full Text :: https://doi.org/10.1109/icsict.2010.5667696