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Optically induced bistability in the mobility of a two-dimensional electron gas coupled to a layer of quantum dots

Authors :
Michael Pepper
Andrew J. Shields
Ken Cooper
David A. Ritchie
Ian Farrer
M. P. O’Sullivan
Clare Foden
Source :
Applied Physics Letters. 74:735-737
Publication Year :
1999
Publisher :
AIP Publishing, 1999.

Abstract

We report a bistability in the resistance of a GaAs/AlGaAs modulation doped field effect transistor in which a layer of InAs self-organized quantum dots has been grown near the electron channel. Brief optical illumination causes a large, persistent drop in the two-dimensional electron gas (2DEG) resistance which can be recovered by allowing a current to flow through the Schottky gate. We demonstrate that illumination reduces the number of electrons trapped in the quantum dots, lowering their potential and thereby enhancing the 2DEG mobility. This bistability could be the basis of an optical memory or sensitive phototransistor.

Details

ISSN :
10773118 and 00036951
Volume :
74
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........0daa73982c55ccf318ebc0502d93453f
Full Text :
https://doi.org/10.1063/1.123107