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Optically induced bistability in the mobility of a two-dimensional electron gas coupled to a layer of quantum dots
- Source :
- Applied Physics Letters. 74:735-737
- Publication Year :
- 1999
- Publisher :
- AIP Publishing, 1999.
-
Abstract
- We report a bistability in the resistance of a GaAs/AlGaAs modulation doped field effect transistor in which a layer of InAs self-organized quantum dots has been grown near the electron channel. Brief optical illumination causes a large, persistent drop in the two-dimensional electron gas (2DEG) resistance which can be recovered by allowing a current to flow through the Schottky gate. We demonstrate that illumination reduces the number of electrons trapped in the quantum dots, lowering their potential and thereby enhancing the 2DEG mobility. This bistability could be the basis of an optical memory or sensitive phototransistor.
- Subjects :
- Electron density
Electron mobility
Materials science
Physics and Astronomy (miscellaneous)
Bistability
business.industry
Quantum point contact
Induced high electron mobility transistor
Optical storage
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter::Materials Science
Quantum dot
Optoelectronics
Field-effect transistor
business
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 74
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........0daa73982c55ccf318ebc0502d93453f
- Full Text :
- https://doi.org/10.1063/1.123107