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Breakdown analysis of an asymmetrical double recessed power MESFET's
- Source :
- IEEE Transactions on Electron Devices. 42:209-214
- Publication Year :
- 1995
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 1995.
-
Abstract
- FET's with double stepped gate recess are commonly admitted to be presently a very convenient structure capable to overcome the fundamental power limitation related to the breakdown voltage. The present paper deals with an analysis of a double recessed MESFET with a very good and instructive breakdown performance. For the first time we explain on the basis of gate current observations why the double recess structure allows a large breakdown improvement not only at pinch off voltage but also at open channel. Moreover it is shown that the breakdown optimization is fully compatible with the microwave gain performance. >
- Subjects :
- Power gain
Engineering
business.industry
Transconductance
Electrical engineering
Time-dependent gate oxide breakdown
Capacitance
Electronic, Optical and Magnetic Materials
Optoelectronics
Breakdown voltage
Power semiconductor device
MESFET
Electrical and Electronic Engineering
business
Voltage
Subjects
Details
- ISSN :
- 00189383
- Volume :
- 42
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........0db1110fb1b592fd196e8f72b375bc61