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Germanium n+/p Shallow Junction With Record Rectification Ratio Formed by Low-Temperature Preannealing and Excimer Laser Annealing
- Source :
- IEEE Transactions on Electron Devices. 61:3060-3065
- Publication Year :
- 2014
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2014.
-
Abstract
- A germanium n + /p shallow junction formed by a combination of low-temperature preannealing (LTPA) and excimer laser annealing at a low fluence of 150 mJ/cm 2 for phosphorus-implanted germanium is demonstrated. The LTPA step plays a critical role in annihilating the implantation damages and significantly suppressing phosphorus diffusion during laser annealing process, resulting in a very small dopant diffusion length with high activation level of phosphorus. A well-behaved Ge n + /p shallow junction diode with a record rectification ratio of ~10 7 and low leakage current density of 8.3 × 10 -5 A/cm 2 is achieved, which is greatly beneficial to the scaled Ge MOSFET technology.
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 61
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........0dc921487883d1418618e92523c0320f