Enhancement-mode pseudomorphic high-electron-mobility transistor with a nanoscale oxidized GaAs gate

This study examines the feasibility of an enhancement-mode (E-mode) pseudomorphic high-electron-mobility transistor (PHEMT) with a nanoscale oxidized GaAs gate using liquid phase oxidation (LPO). Using LPO, the threshold voltage (V th ) can be shifted positively. Results indicated a reduced leakage current, a higher breakdown voltage, and an improved subthreshold swing compared to those of the Schottky-gate PHEMT. Therefore, LPO did not degrade the DC performance of the device.