Characterization of 100 keV silicon negative ion implanted SiO2 thin films

100 keV silicon negative ions implanted SiO2 thin films with fluences varying from 1 x 10 15 to 2 x 10 17 ion cm−2 were investigated using Electron spin resonance (ESR) at low temperature and Energy dispersive X-ray spectroscopy (EDX) techniques. ESR studies showed the presence of oxygen vacancies related to silicon dangling bonds (Pb-centres) at g-values ranging between 2.0034 to 2.0038. The ESR signal intensity was found to increase with decrease in the temperatures from 223K to 123K. The defect density estimated from ESR signal was found to increase from 1.9 x 1016 cm-2 to 3.5 x 1016 cm-2 with decrease in the temperature from 223K to123K. EDX studies revealed the decrease in the atomic percentage ratio of oxygen to silicon with respect to increase in the silicon ion fluences in SiO2 thin film layer. EDX results showed the increase in Si-Si bonds formed as compared to Si-O bonds due to breakdown of SiO2 lattice after implantation.