The Effect of H2/Ar Plasma Treatment Over Photoconductivity of Sige Nanoparticles Sandwiched Between Silicon Oxide Matrix

The effect of room temperature hydrogen plasma treatment on the photoconductive properties of the SiO 2 matrix containing SiGe nanoparticles is investigated. A considerable increase in photocurrent intensity is observed after plasma treatment. The increase is partly attributed to neutralization of dangling bonds around the nanoparticles and partly to passivation of non-radiative centers and defects in the matrix and at the nanoparticles-matrix interfaces.