A comparative study of the density of defect states in bulk samples and thin films of glassy Se90Sb10

The present paper reports the comparative study of density of defect states (DOS) between bulk samples and thin films of glassy Se90Sb10. These glasses have been prepared by the quenching technique. Thin films of these glasses have been prepared by vacuum evaporation technique. Space-charge-limited conduction (SCLC) has been measured at different temperatures. The density of localized states near Fermi level is calculated by fitting the data to the theory of SCLC for the case of uniform distribution of localized states for bulk as well as for thin films. A comparison has been made between the density of states calculated in these two cases.