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Three-dimensional evaluation of gettering ability for oxygen atoms at small-angle tilt boundaries in Czochralski-grown silicon crystals

Authors :
Kaihei Inoue
Yasuyoshi Nagai
Koji Inoue
Kozo Fujiwara
Naoki Ebisawa
Ichiro Yonenaga
Yutaka Ohno
Kentaro Kutsukake
Momoko Deura
Yasuo Shimizu
Source :
Applied Physics Letters. 106:251603
Publication Year :
2015
Publisher :
AIP Publishing, 2015.

Abstract

Three-dimensional distribution of oxygen atoms at small-angle tilt boundaries (SATBs) in Czochralski-grown p-type silicon ingots was investigated by atom probe tomography combined with transmission electron microscopy. Oxygen gettering along edge dislocations composing SATBs, post crystal growth, was observed. The gettering ability of SATBs would depend both on the dislocation strain and on the dislocation density. Oxygen atoms would agglomerate in the atomic sites under the tensile hydrostatic stress larger than about 2.0 GPa induced by the dislocations. It was suggested that the density of the atomic sites, depending on the tilt angle of SATBs, determined the gettering ability of SATBs.

Details

ISSN :
10773118 and 00036951
Volume :
106
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........0e56a4fe350f7de6dc9f1e5a27e411d9
Full Text :
https://doi.org/10.1063/1.4921742