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Three-dimensional evaluation of gettering ability for oxygen atoms at small-angle tilt boundaries in Czochralski-grown silicon crystals
- Source :
- Applied Physics Letters. 106:251603
- Publication Year :
- 2015
- Publisher :
- AIP Publishing, 2015.
-
Abstract
- Three-dimensional distribution of oxygen atoms at small-angle tilt boundaries (SATBs) in Czochralski-grown p-type silicon ingots was investigated by atom probe tomography combined with transmission electron microscopy. Oxygen gettering along edge dislocations composing SATBs, post crystal growth, was observed. The gettering ability of SATBs would depend both on the dislocation strain and on the dislocation density. Oxygen atoms would agglomerate in the atomic sites under the tensile hydrostatic stress larger than about 2.0 GPa induced by the dislocations. It was suggested that the density of the atomic sites, depending on the tilt angle of SATBs, determined the gettering ability of SATBs.
- Subjects :
- inorganic chemicals
Materials science
Physics and Astronomy (miscellaneous)
Silicon
Physics::Instrumentation and Detectors
chemistry.chemical_element
Crystal growth
Atom probe
Molecular physics
Crystallographic defect
law.invention
Condensed Matter::Materials Science
Crystallography
Tilt (optics)
chemistry
Transmission electron microscopy
law
Hydrostatic stress
Dislocation
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 106
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........0e56a4fe350f7de6dc9f1e5a27e411d9
- Full Text :
- https://doi.org/10.1063/1.4921742