Low temperature semiconductor surface passivation for nanoelectronic device applications

A low temperature remote plasma assisted oxidation (RPAO) process for interface formation and passivation has been extended from Si and SiC to GaN. The process, which can be applied to nanoscale structures including quantum dots and wires, provides excellent control of ultra-thin interfacial layers which passivate the GaN substrate, preventing a parasitic or subcutaneous oxidation of the substrate during plasma deposition of SiO 2 . This remote plasma processing for GaN-dielectric heterostructures includes: (i) an in situ nitrogen plasma surface clean, (ii) RPAO for formation of an interfacial GaO x transition region between the GaN and deposited dielectric, and (iii) a remote plasma enhanced chemical vapor deposition of an SiO 2 dielectric.