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Monolithic 3D integration: A powerful alternative to classical 2D scaling

Authors :
O. Faynot
Ogun Turkyilmaz
F. Deprat
F. Ponthenier
M.-P. Samson
Hossam Sarhan
G. Cibrario
L. Pasini
V. Lu
Claude Tabone
J-E. Michallet
M. Vinet
Perrine Batude
N. Rambal
Fabien Clermidy
O. Billoint
JM Hartmannn
Claire Fenouillet-Beranger
O. Rozeau
Benoit Sklenard
Laurent Brunet
Sebastien Thuries
Bernard Previtali
Source :
2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
Publication Year :
2014
Publisher :
IEEE, 2014.

Abstract

Monolithic or sequential 3D Integration is a powerful technological enabler for actual 3D IC design as the stacked layers can be connected at the transistor scale. This paper reviews the opportunities brought by M3DI and highlights the applications benefiting from this small 3D contact pitch. It also presents the technological challenges of this concept and offers a general overview of the potential solutions to obtain a high performance low temperature top transistor while keeping bottom MOSFET integrity.

Details

Database :
OpenAIRE
Journal :
2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
Accession number :
edsair.doi...........0e65683a3ff1bb5b0508e6588b94e912