Back to Search
Start Over
Highly Reliable and Secure PUF Using Resistive Memory Integrated Into a 28 nm CMOS Process
- Source :
- IEEE Transactions on Electron Devices. 70:2291-2296
- Publication Year :
- 2023
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2023.
- Subjects :
- Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Subjects
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 70
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........0e6f3490cc9aab03aee26d798e786a68
- Full Text :
- https://doi.org/10.1109/ted.2023.3251953