Back to Search
Start Over
Effect of Annealing Temperature on Phase-change Characteristics of GeSbTe-based Bilayers
- Source :
- Journal of the Korean Institute of Electrical and Electronic Material Engineers. 30:86-90
- Publication Year :
- 2017
- Publisher :
- The Korean Institute of Electrical and Electronic Material Engineers, 2017.
Details
- ISSN :
- 12267945
- Volume :
- 30
- Database :
- OpenAIRE
- Journal :
- Journal of the Korean Institute of Electrical and Electronic Material Engineers
- Accession number :
- edsair.doi...........0e914f684b304602c6a9ef71e76ff05d