Development of (λ∼9.4µm) GaAs-based quantum cascade lasers

The development of (λ∼9.4µm) GaAs-based quantum cascade lasers (QCLs) operating over 260K is reported. The laser design followed an “anticrossed-diagonal” scheme of Page et al. [1]. The QCL GaAs/Al 0.45 Ga 0.55 As heterostructures were grown by solid source (SS) MBE. The double trench lasers were fabricated using wet etching and Si 3 N 4 for electrical insulation. Double plasmon confinement with Al-free waveguide has been used to minimize absorption losses. Optical and electrical properties of resulting devices are presented and discussed.