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Characterizing p-channel thin film transistors using ZnO/hydrated polyvinyl alcohol as the conducting channel

Authors :
Tzu-Hsien Hsu
Pei-Hsuan Lo
Leo Chau-Kuang Liau
Source :
Applied Physics Letters. 105:063509
Publication Year :
2014
Publisher :
AIP Publishing, 2014.

Abstract

We report the characteristics of p-channel thin film transistors (p-TFTs) with ZnO/hydrated polyvinyl alcohol (PVA) (ZnO/PVA) conducting channels. The metal-oxide-semiconductor structure of the p-TFTs was composed of indium tin oxide (ITO)/SiO2/ZnO/PVA layers. The TFT was assembled using PVA gel, which was glued to ITO substrates patterned to form source and drain electrodes. The ZnO/PVA composite film acted as an effective conducting film because of the chemisorption reaction at the film interface where free electrons can be generated. The formation of the conducting channel was also affected by VG applied to the TFT. The ZnO/PVA-based TFTs demonstrated p-channel transistor performance, shown by current-voltage (I-V) data analysis. The electrical parameters of the device were evaluated, including the on/off ratio (∼103), threshold voltage (Vth, −1 V), and subthreshold swing (−2.2 V/dec). The PVA/ZnO-based p-TFTs were fabricated using simple and cost-effective approaches instead of doping methods.

Details

ISSN :
10773118 and 00036951
Volume :
105
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........0f42101f2dc89e210c15c73e5947d731
Full Text :
https://doi.org/10.1063/1.4893450