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Polypyrrole thin films for gas sensors prepared by Matrix-Assisted Pulsed Laser Evaporation technology: Effect of deposition parameters on material properties
- Source :
- Thin Solid Films. 517:2083-2087
- Publication Year :
- 2009
- Publisher :
- Elsevier BV, 2009.
-
Abstract
- Thin films of polypyrrole (PPY) were prepared by Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technology from two matrices: water and dimethylsulfoxide (DMSO). The deposition was carried out using a KrF excimer laser (laser fluence F ranged from 0.1 to 0.6 J cm− 2). This work deals with optimization of two deposition parameters – laser fluence and number of pulses – for both matrices. From the deposition curves, the fluence thresholds, Fth, and maximum growth rates were subsequently determined (water matrix: Fth ~ 0.40–0.45 J cm− 2, maximum growth rate 0.16 nm pulse− 1; DMSO matrix: Fth ~ 0.25–0.30 J cm− 2; maximum growth rate 0.20 nm pulse− 1). The changes in chemical composition of deposited layers were studied by Attenuated Total Reflection Fourier Transform Infrared spectroscopy. Surface morphology was characterized by Atomic Force Microscopy. A discussion is also presented concerning relationships between laser fluence and chemical composition of deposited layers with respect to their potential application in gas sensors. Finally, the response of a sensor with a MAPLE deposited PPY active layer to air humidity is presented.
- Subjects :
- Materials science
Excimer laser
medicine.medical_treatment
Metals and Alloys
Analytical chemistry
Surfaces and Interfaces
Laser
Evaporation (deposition)
Fluence
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
law.invention
law
Attenuated total reflection
Materials Chemistry
medicine
Deposition (phase transition)
Thin film
Fourier transform infrared spectroscopy
Subjects
Details
- ISSN :
- 00406090
- Volume :
- 517
- Database :
- OpenAIRE
- Journal :
- Thin Solid Films
- Accession number :
- edsair.doi...........0fa796bcdee4ee353df5eacb5faf8828
- Full Text :
- https://doi.org/10.1016/j.tsf.2008.10.047