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A slow-trap model for the kink effect on InAlAs/InP HFET
- Source :
- Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials.
- Publication Year :
- 2002
- Publisher :
- IEEE, 2002.
-
Abstract
- The kink effect in InAlAs/InP HFETs was examined in temperature and frequency dependent measurements. A slow states mechanism is found to be probably responsible for the increase of the drain-source conductance related to the kink effect. A deep-level with activation energy of 0.53 eV was deduced from drain conductance dispersion measurements. This level, with a slow emission rate at room temperature, seems to be associated with the kink effect.
- Subjects :
- Materials science
Deep level
Condensed matter physics
business.industry
Conductance
Activation energy
Electric admittance
Impact ionization
chemistry.chemical_compound
chemistry
Dispersion (optics)
Indium phosphide
Optoelectronics
lipids (amino acids, peptides, and proteins)
Field-effect transistor
business
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials
- Accession number :
- edsair.doi...........101df4af2330990e46f5cde3c15fb03f
- Full Text :
- https://doi.org/10.1109/iciprm.1997.600082