The growth of thick GaN film on sapphire substrate by using ZnO buffer layer

Sputtered ZnO layers have been used as buffer layers in the growth of GaN by hydride VPE. With these buffers we have not only improved the reproducibility of the growth of GaN but also achieved the preparation of single crystalline GaN films alone by etching buffer layers away. In this paper we have studied the effects of the ZnO buffer layer on GaN films.