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Aluminum Nitride Epitaxially Grown on Silicon: Orientation Relationships
- Source :
- Japanese Journal of Applied Physics. 20:L173
- Publication Year :
- 1981
- Publisher :
- IOP Publishing, 1981.
-
Abstract
- Epitaxial aluminum nitride (AlN) films have been grown on (111), (110) and (100)-oriented Si substrates using metalorganic chemical vapor deposition (MO-CVD). We found that (0001)-oriented AlN films were grown on the above three planes of Si substrates.
Details
- ISSN :
- 13474065 and 00214922
- Volume :
- 20
- Database :
- OpenAIRE
- Journal :
- Japanese Journal of Applied Physics
- Accession number :
- edsair.doi...........1134ec0c285f4c89e37a4b170b00b9c3
- Full Text :
- https://doi.org/10.1143/jjap.20.l173