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Silicon dioxide deposited by ECR-PECVD for low-temperature Si devices processing
- Source :
- Microelectronics Reliability. 45:879-882
- Publication Year :
- 2005
- Publisher :
- Elsevier BV, 2005.
-
Abstract
- Silicon dioxide films have been deposited at temperatures less than 270 °C in an electron cyclotron resonance (ECR) plasma reactor from a gas phase combination of O2, SiH4 and He. The physical characterization of the material was carried out through pinhole density analysis as a function of substrate temperature for different μ-wave power (Ew). Higher Ew at room deposition temperature (RT) shows low defects densities ( 10 MV/cm are observed from ramps I–V. Moreover, from high frequency and quasi-static C–V characteristics we studied interface quality as function of annealing time and annealing temperature in N2. We found that even for low annealing temperature (200 °C) is possible to reduce considerably the interface state density down to 5 × 1011 cm−2 eV−1. These results show that a complete low-temperatures process can be achieved for the integration of SiO2 as gate insulator in polysilicon TFTs on plastic substrates.
- Subjects :
- Chemistry
Silicon dioxide
Annealing (metallurgy)
business.industry
Dielectric
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Electron cyclotron resonance
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
Nuclear magnetic resonance
Thin-film transistor
Plasma-enhanced chemical vapor deposition
Electric field
Optoelectronics
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Thermal analysis
business
Subjects
Details
- ISSN :
- 00262714
- Volume :
- 45
- Database :
- OpenAIRE
- Journal :
- Microelectronics Reliability
- Accession number :
- edsair.doi...........11dcb9678c1eb7d30e1cb9319db65604