A gate-tunable symmetric bipolar junction transistor fabricatedviafemtosecond laser processing

MLA

Hao-Wei Guo, et al. “A Gate-Tunable Symmetric Bipolar Junction Transistor Fabricatedviafemtosecond Laser Processing.” Nanoscale Advances, vol. 2, Jan. 2020, pp. 1733–40. EBSCOhost, https://doi.org/10.1039/d0na00201a.

APA

Hao-Wei Guo, De-Kang Li, Zhi-Bo Liu, Jianguo Tian, Xi-Lin Zhang, Xiao-Kuan Li, Kai-Xuan Huang, Bin-Wei Yao, Bao-Wang Su, & Xu-Dong Chen. (2020). A gate-tunable symmetric bipolar junction transistor fabricatedviafemtosecond laser processing. Nanoscale Advances, 2, 1733–1740. https://doi.org/10.1039/d0na00201a

Chicago

Hao-Wei Guo, De-Kang Li, Zhi-Bo Liu, Jianguo Tian, Xi-Lin Zhang, Xiao-Kuan Li, Kai-Xuan Huang, Bin-Wei Yao, Bao-Wang Su, and Xu-Dong Chen. 2020. “A Gate-Tunable Symmetric Bipolar Junction Transistor Fabricatedviafemtosecond Laser Processing.” Nanoscale Advances 2 (January): 1733–40. doi:10.1039/d0na00201a.