Aluminum thin film growth by the thermal decomposition of triethylamine alane

Triethylamine alane (TEAA) decomposes on an Al(111) single crystal surface at temperatures above ∼310 K to yield pure aluminum thin films, liberating hydrogen and triethylamine into the gas phase. Aluminum deposition is epitaxial and clean (no carbon or nitrogen containing species are observed by Auger electron spectroscopy). The film growth rate is limited by the rate of the recombinative desorption of hydrogen from the surface. These results are compared to similar data from experiments on the surface-mediated thermal decomposition of trimethylamine alane.