Cite
Mobility Enhancement and Gate-Induced-Drain-Leakage Analysis of Strained-SiGe Channel p-MOSFETs with Higher-κ LaLuO 3 Gate Dielectric
MLA
Ming Chen, et al. “Mobility Enhancement and Gate-Induced-Drain-Leakage Analysis of Strained-SiGe Channel p-MOSFETs with Higher-κ LaLuO 3 Gate Dielectric.” Chinese Physics Letters, vol. 31, Jan. 2014, p. 016101. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........1202e5850b23519150805b8f728c986d&authtype=sso&custid=ns315887.
APA
Ming Chen, Wenjie Yu, Zhongying Xue, Qing-Tai Zhao, Bo Zhang, & Chang Liu. (2014). Mobility Enhancement and Gate-Induced-Drain-Leakage Analysis of Strained-SiGe Channel p-MOSFETs with Higher-κ LaLuO 3 Gate Dielectric. Chinese Physics Letters, 31, 016101.
Chicago
Ming Chen, Wenjie Yu, Zhongying Xue, Qing-Tai Zhao, Bo Zhang, and Chang Liu. 2014. “Mobility Enhancement and Gate-Induced-Drain-Leakage Analysis of Strained-SiGe Channel p-MOSFETs with Higher-κ LaLuO 3 Gate Dielectric.” Chinese Physics Letters 31 (January): 016101. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........1202e5850b23519150805b8f728c986d&authtype=sso&custid=ns315887.