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Epitaxial growth of 2.5-μm quaternary AlInGaN for n-cladding layer in GaN-based green laser diodes
- Source :
- Fundamental Research. 1:672-676
- Publication Year :
- 2021
- Publisher :
- Elsevier BV, 2021.
-
Abstract
- The ridge morphology, which is related to random atomic step meandering, appears in thick AlInGaN films grown by metal organic chemical vapor deposition on both GaN templates and free-standing GaN substrates; this can be primarily attributed to the in-plane compressive strain in the thick layer. Therefore, a 2.5-μm Al0.08In0.0123GaN film with a slightly tensive strain was grown, with a regular and smooth step-flow morphology; the root mean square deviation of the film (with a size of 5 μm × 5 μm) was 0.56 nm.
Details
- ISSN :
- 26673258
- Volume :
- 1
- Database :
- OpenAIRE
- Journal :
- Fundamental Research
- Accession number :
- edsair.doi...........1203406647c982fec2d998fe4ae5947f