Investigation of photoelectrical properties of epitaxially grown heterojunction thermophotovoltaic cells

Authors :: K. M. Gambaryan
Vladimir M. Aroutiounian
G.Sh. Shmavonyan
A. M. Zadoyan
Ovsanna Zadoyan
Source :: Journal of Contemporary Physics (Armenian Academy of Sciences). 49:258-263
Publication Year :: 2014
Publisher :: Allerton Press, 2014.
Abstract: By the method of metal-organic chemical vapor deposition we have epitaxially grown effective samples of InAs/p-GaSb/n-GaSb/n-GaAs/InxGa1−xAs/Ge/Si(113) photovoltaic cells and investigated their photoelectric properties. The suitability of application of quality heterojunction diode structures in termophotovoltaic cells is experimentally proved.

Subjects :: Materials science
business.industry
Thermophotovoltaic
Photovoltaic system
General Physics and Astronomy
Optoelectronics
Heterojunction
Chemical vapor deposition
Photoelectric effect
Epitaxy
business
Heterojunction diode

Tools