Enhancement of electrically controlled ferromagnetism in metal-oxide films through magnetic transition metal doping

Large forming voltages, low resistive and magnetic switching ratios and poor reversibility have impeded the practical applications of electrical manipulation of magnetic properties through a resistive switching process. Here we show that all above parameters can be improved greatly through Co doping in Ti/TiO 2 /Pt device. A comparison of different mechanism of electrically controlled nonvolatile ferromagnetism in Co-doped and undoped TiO 2 films is proposed. These results will provide a fundamental understanding for the electrically control of ferromagnetism in doped and undoped metal-oxide films and may be extended to certain materials in addition to Co doped TiO 2 .