Improved diffusion barrier performance of Ru/TaN bilayer by N effusion in TaN underlayer

Two bilayers of Ru/TaN with low N concentration and high N concentration (TaN L and TaN H ) were used to determine the effect of N effusion on the barrier property. The results show that Ru/TaN H bilayer exhibits a better barrier property, in which RuN existed even after annealing at 650 °C. The improved barrier property is attributed to the formation of RuN and N atoms stuffing in grain boundaries of Ru layer by sufficient effusion N atoms from TaN H during annealing.