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Ultraviolet Luminescence Depending on Zn Interstitial in ZnO Polycrystalline Films

Authors :
XU Xiao-Qiu
Zhong Sheng
Zhang Wei-Ying
FU Zhu-Xi
Shi Yuan-Yuan
Tian Ke
Source :
Chinese Physics Letters. 25:3783-3786
Publication Year :
2008
Publisher :
IOP Publishing, 2008.

Abstract

The ultraviolet emission line at 3.315 eV is observed at 8K in ZnO polycrystalline films and investigated by temperature-dependent photoluminescence spectra and cathodoluminescence spatial image. The relative intensity of 3.315eV emission line depends strongly on growth and annealing conditions. The cathodoluminescence image shows that the 3.315eV emission localizes on the surface and ridge of ZnO grain. These results suggest that the 3.315 eV emission attributes to Zn interstitials at the grain surface and ridge. This emission is stable in the range from 8K to 300K and contributes to the room temperature ultraviolet band.

Details

ISSN :
17413540 and 0256307X
Volume :
25
Database :
OpenAIRE
Journal :
Chinese Physics Letters
Accession number :
edsair.doi...........13912d4cf4fa01d5337b7621e4dc3452
Full Text :
https://doi.org/10.1088/0256-307x/25/10/072