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Measurement of High Field Electron Transport in Silicon Carbide

Measurement of High Field Electron Transport in Silicon Carbide

Authors :
James A. Cooper
Idrees A. Khan
Source :
Materials Science Forum. :509-512
Publication Year :
1998
Publisher :
Trans Tech Publications, Ltd., 1998.

Abstract

We report recent measurements of the drift velocity of electrons parallel to the basal plane in 6H and 4H silicon carbide (SiC) as a function of applied electric field. The dependence of the low field mobility and saturated drift velocity on temperature are also reported. The saturated drift velocities at room temperature are approximately 1.9/spl times/10/sup 7/ cm/s in 6H-SiC and 2.2/spl times/10/sup 7/ cm/s in 4H-SiC.

Details

ISSN :
16629752
Database :
OpenAIRE
Journal :
Materials Science Forum
Accession number :
edsair.doi...........14af100330838c90b37bb29737c353d5
Full Text :
https://doi.org/10.4028/www.scientific.net/msf.264-268.509