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Measurement of High Field Electron Transport in Silicon Carbide
Measurement of High Field Electron Transport in Silicon Carbide
- Source :
- Materials Science Forum. :509-512
- Publication Year :
- 1998
- Publisher :
- Trans Tech Publications, Ltd., 1998.
-
Abstract
- We report recent measurements of the drift velocity of electrons parallel to the basal plane in 6H and 4H silicon carbide (SiC) as a function of applied electric field. The dependence of the low field mobility and saturated drift velocity on temperature are also reported. The saturated drift velocities at room temperature are approximately 1.9/spl times/10/sup 7/ cm/s in 6H-SiC and 2.2/spl times/10/sup 7/ cm/s in 4H-SiC.
- Subjects :
- Drift velocity
Materials science
Field (physics)
Mechanical Engineering
Saturation velocity
Electron
Condensed Matter Physics
Electron transport chain
chemistry.chemical_compound
chemistry
Mechanics of Materials
Electric field
Electronic engineering
Silicon carbide
General Materials Science
High field
Atomic physics
Subjects
Details
- ISSN :
- 16629752
- Database :
- OpenAIRE
- Journal :
- Materials Science Forum
- Accession number :
- edsair.doi...........14af100330838c90b37bb29737c353d5
- Full Text :
- https://doi.org/10.4028/www.scientific.net/msf.264-268.509