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Polarization-induced transport in ferroelectric organic field-effect transistors
- Source :
- Journal of Applied Physics. 117:105501
- Publication Year :
- 2015
- Publisher :
- AIP Publishing, 2015.
-
Abstract
- Ferroelectric dielectrics, permitting access to nearly an order of magnitude range of dielectric constants with temperature as the tuning parameter, offer a great platform to monitor the changes in interfacial transport in organic field-effect transistors (OFETs) as the polarization strength is tuned. Temperature-dependent transport studies have been carried out from pentacene-based OFETs using the ferroelectric copolymer poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) as a gate insulating layer. The thickness of the gate dielectric was varied from 20 nm to 500 nm. By fits to an Arrhenius-type dependence of the charge carrier mobility as a function of temperature, the activation energy in the ferroelectric phase is found to increase as the thickness of the PVDF-TrFE layer decreases. The weak temperature-dependence of the charge carrier mobility in the ferroelectric phase of PVDF-TrFE may be attributed to a polarization fluctuation driven transport, which results from a coupling of the charge ca...
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 117
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........14fa7f1b729df5ffa70fb62f4163a58d