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Low-temperature growth and properties of ZnO nanowires

Authors :
Zhongfan Liu
Zhibo Liu
Xuan Wang
Jin Zhang
Qingwen Li
Rongming Wang
Source :
Applied Physics Letters. 84:4941-4943
Publication Year :
2004
Publisher :
AIP Publishing, 2004.

Abstract

ZnO nanowires were obtained through evaporation of zinc powders under a low temperature of 400 °C. These ZnO nanowires, in the diameter of ∼10 nm, were long and curved with lengths of tens of micrometers. High-resolution transmission electron microscopy showed these ZnO nanowires were mostly crystalline structure; however, the kink parts contained dislocations and stacking faults. Furthermore, the movement of dislocations was observed in the kink parts under e-beam irradiation. Photoluminescence and Raman spectra show that there exist oxygen vacancies in the ZnO nanowires. Possible reasons for the growth and properties of ZnO nanowires were discussed.

Details

ISSN :
10773118 and 00036951
Volume :
84
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........152ad34cd6be7591861a5948abfd98db
Full Text :
https://doi.org/10.1063/1.1760594