Resistive switching behaviour of highly epitaxial CeO2thin film for memory application

MLA

Mengmeng Yang, et al. “Resistive Switching Behaviour of Highly Epitaxial CeO2thin Film for Memory Application.” Physica Status Solidi (RRL) - Rapid Research Letters, vol. 8, Oct. 2013, pp. 95–99. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........158d03b7de0cac1f7f2af53c6274348c&authtype=sso&custid=ns315887.

APA

Mengmeng Yang, Feng Wei, Jun Chen, Zhimin Yang, Hongbin Zhao, Qiuyun Chen, & Jun Zhang. (2013). Resistive switching behaviour of highly epitaxial CeO2thin film for memory application. Physica Status Solidi (RRL) - Rapid Research Letters, 8, 95–99.

Chicago

Mengmeng Yang, Feng Wei, Jun Chen, Zhimin Yang, Hongbin Zhao, Qiuyun Chen, and Jun Zhang. 2013. “Resistive Switching Behaviour of Highly Epitaxial CeO2thin Film for Memory Application.” Physica Status Solidi (RRL) - Rapid Research Letters 8 (October): 95–99. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........158d03b7de0cac1f7f2af53c6274348c&authtype=sso&custid=ns315887.