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Thermal-drag carrier cooling in undoped semiconductors

Authors :
T. Apostolova
D. A. Cardimona
Danhong Huang
Paul M. Alsing
Source :
Journal of Applied Physics. 98:063516
Publication Year :
2005
Publisher :
AIP Publishing, 2005.

Abstract

An approach for carrier cooling in undoped and contactless semiconductors is proposed by using thermal-drag effects in comparison with other methods, such as direct resonant tunneling, nonresonant thermionic, and junction-tunneling cooling, as well as indirect optothermionic and thermoelectric cooling, of carriers in doped and contacted semiconductors. A four-step microscopic model is proposed for this thermal-drag carrier cooling in undoped semiconductors. Wide-band-gap semiconductors with small lattice specific heat and small exchange specific heat between carriers and phonons are found to achieve the best thermal-drag carrier cooling under near-band-edge interband pumping by a weak field. This indirect carrier cooling is accompanied by the lattice cooling. The carrier temperature is pinned to the lattice temperature due to ultrafast carrier-phonon scattering, and it is dragged down by the reduction of the lattice temperature, i.e., the thermal-drag effects.

Details

ISSN :
10897550 and 00218979
Volume :
98
Database :
OpenAIRE
Journal :
Journal of Applied Physics
Accession number :
edsair.doi...........15c2c03bfc44b4ddf1f987d79f309e10
Full Text :
https://doi.org/10.1063/1.2041842