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Thermal-drag carrier cooling in undoped semiconductors
- Source :
- Journal of Applied Physics. 98:063516
- Publication Year :
- 2005
- Publisher :
- AIP Publishing, 2005.
-
Abstract
- An approach for carrier cooling in undoped and contactless semiconductors is proposed by using thermal-drag effects in comparison with other methods, such as direct resonant tunneling, nonresonant thermionic, and junction-tunneling cooling, as well as indirect optothermionic and thermoelectric cooling, of carriers in doped and contacted semiconductors. A four-step microscopic model is proposed for this thermal-drag carrier cooling in undoped semiconductors. Wide-band-gap semiconductors with small lattice specific heat and small exchange specific heat between carriers and phonons are found to achieve the best thermal-drag carrier cooling under near-band-edge interband pumping by a weak field. This indirect carrier cooling is accompanied by the lattice cooling. The carrier temperature is pinned to the lattice temperature due to ultrafast carrier-phonon scattering, and it is dragged down by the reduction of the lattice temperature, i.e., the thermal-drag effects.
- Subjects :
- Thermoelectric cooling
Materials science
Resolved sideband cooling
Condensed matter physics
business.industry
Doping
General Physics and Astronomy
Thermionic emission
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter::Materials Science
Semiconductor
Raman cooling
Condensed Matter::Superconductivity
Laser cooling
Optoelectronics
Condensed Matter::Strongly Correlated Electrons
business
Quantum tunnelling
Subjects
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 98
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........15c2c03bfc44b4ddf1f987d79f309e10
- Full Text :
- https://doi.org/10.1063/1.2041842