Cite
AlGaN/GaN MIS-HFET with improvement in high temperature gate bias stress-induced reliability
MLA
Yu-Syuan Lin, et al. “AlGaN/GaN MIS-HFET with Improvement in High Temperature Gate Bias Stress-Induced Reliability.” 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC’s (ISPSD), June 2014. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........15f0b75d4642c065a0ced749472125e9&authtype=sso&custid=ns315887.
APA
Yu-Syuan Lin, Alex Kalnitsky, Ru-Yi Su, C. W. Hsiung, P.-C. Liu, Ming-Huei Lin, Chiu Hsien-Kuang, F. J. Yang, H. C. Tuan, King-Yuen Wong, S. D. Liu, J. L. Yu, Fu-Wei Yao, C. J. Yu, Xiaomeng Chen, C. L. Tsai, Yani Lai, Chia-Shiung Tsai, Ching-Ray Chen, … Chiang Chen-Hao. (2014). AlGaN/GaN MIS-HFET with improvement in high temperature gate bias stress-induced reliability. 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC’s (ISPSD).
Chicago
Yu-Syuan Lin, Alex Kalnitsky, Ru-Yi Su, C. W. Hsiung, P.-C. Liu, Ming-Huei Lin, Chiu Hsien-Kuang, et al. 2014. “AlGaN/GaN MIS-HFET with Improvement in High Temperature Gate Bias Stress-Induced Reliability.” 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC’s (ISPSD), June. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........15f0b75d4642c065a0ced749472125e9&authtype=sso&custid=ns315887.