(511) and (711) GaAs epilayers prepared by molecular-beam epitaxy

MLA

K. Young, et al. “(511) and (711) GaAs Epilayers Prepared by Molecular-Beam Epitaxy.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 10, Jan. 1992, p. 71. EBSCOhost, https://doi.org/10.1116/1.586394.

APA

K. Young, J. M. Phillips, & Antoine Kahn. (1992). (511) and (711) GaAs epilayers prepared by molecular-beam epitaxy. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 10, 71. https://doi.org/10.1116/1.586394

Chicago

K. Young, J. M. Phillips, and Antoine Kahn. 1992. “(511) and (711) GaAs Epilayers Prepared by Molecular-Beam Epitaxy.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 10 (January): 71. doi:10.1116/1.586394.