Oxygen Concentration Dependence of Photovoltaic Properties of Intermediate Band Solar Cells based on Cl-doped ZnTeO

We report the effect of O concentration in Cldoped ZnTeO on the photovoltaic (PV) properties of intermediate band solar cells (IBSCs) with a n-ZnS/ZnTe/Cl-doped ZnTeO/ ZnTe/p-ZnTe structure. With increasing O concentration in ZnTeO, an open circuit voltage does not change largely but a short circuit current density decreases significantly. On the other hands, the photocurrent induced by two-step photon absorption (TSPA) through the IB increases with the increase of O concentration, probably due to the increased density of states in IB.