Back to Search
Start Over
New threshold voltage definition for undoped symmetrical DG MOSFET
- Source :
- Microelectronics Reliability. 52:294-295
- Publication Year :
- 2012
- Publisher :
- Elsevier BV, 2012.
-
Abstract
- A new threshold definition is proposed for symmetrical undoped double gate MOS (DGMOS). Threshold voltage is calculated using the potential model described in [1] with only two fitting parameters, the values of which do not depend on device geometry. Comparison with the results of numerical simulations and other models of VT is presented and good accuracy of the new model is demonstrated.
- Subjects :
- 010302 applied physics
business.industry
Electrical engineering
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Atomic and Molecular Physics, and Optics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Threshold voltage
0103 physical sciences
MOSFET
Optoelectronics
Double gate
Electrical and Electronic Engineering
0210 nano-technology
Safety, Risk, Reliability and Quality
business
Mathematics
Subjects
Details
- ISSN :
- 00262714
- Volume :
- 52
- Database :
- OpenAIRE
- Journal :
- Microelectronics Reliability
- Accession number :
- edsair.doi...........1675a79df7c510300540fe89fa2b9f2e
- Full Text :
- https://doi.org/10.1016/j.microrel.2011.07.083