Impurity-Free Vacancy Diffusion Induces Intermixing in GaInP/AlGaInP Quantum Wells Using SiO2Encapsulation

Authors :: 林涛 Lin Tao
马骁宇 Ma Xiaoyu
林楠 Lin Nan
张浩卿 Zhang Haoqing
王勇刚 Wang Yonggang
孙航 Sun Hang
Source :: Laser & Optoelectronics Progress. 52:021602
Publication Year :: 2015
Publisher :: Shanghai Institute of Optics and Fine Mechanics, 2015.

Subjects :: Materials science
Condensed matter physics
Impurity
Vacancy defect
Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Quantum well
Encapsulation (networking)

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