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Indium surface segregation in AlSb and GaSb
- Source :
- Journal of Crystal Growth. 259:69-78
- Publication Year :
- 2003
- Publisher :
- Elsevier BV, 2003.
-
Abstract
- The effect of indium surface segregation during the molecular beam epitaxial growth of AlSb and GaSb on In(As,Sb) is investigated using various techniques including reflection high-energy electron diffraction (RHEED), high-resolution transmission electron microscopy (HRTEM), and high-resolution X-ray diffraction (HRXRD). The peculiar RHEED intensity variation observed during the growth of AlSb and GaSb on In(As,Sb) is interpreted as the consequence of indium surface segregation. This is confirmed by HRTEM investigation. The interface width associated with In segregation is found to increase with the growth temperature, as expected for a kinetically limited surface segregation phenomenon. In the investigated growth temperature range (400–540°C), the In segregation length is always higher for GaSb than for AlSb. Finally, a very good agreement between simulated and experimental HRXRD data corresponding to a GaSb/InAs superlattice is obtained by taking into account the In segregation profile deduced from the RHEED data.
- Subjects :
- Reflection high-energy electron diffraction
Condensed matter physics
Chemistry
Superlattice
chemistry.chemical_element
Heterojunction
Atmospheric temperature range
Condensed Matter Physics
Inorganic Chemistry
Crystallography
Electron diffraction
Materials Chemistry
High-resolution transmission electron microscopy
Indium
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 00220248
- Volume :
- 259
- Database :
- OpenAIRE
- Journal :
- Journal of Crystal Growth
- Accession number :
- edsair.doi...........16dd82de2185624c1571aea6cc924d7b