Growth of ternary and quaternary cubic III‐nitrides on 3C‐SiC substrates

Cubic GaN, AlxGa1–xN/GaN multiple quantum wells and quaternary AlxGayIn1–x–yN layers were grown by plasma assisted molecular beam epitaxy on 3C-SiC substrates. Using the intensity of a reflected high energy electron beam as a probe optimum growth conditions of c-III nitrides were found, when a 1 monolayer Ga coverage is formed at the growing surface. Clear RHEED oscillations during the initial growth of AlxGa1–xN/GaN quantum wells were observed. X-ray diffraction measurements of these quantum well structures show clear satellite peaks indicating smooth interfaces. Growth of quaternary AlxGayIn1–x–yN lattice matched to GaN were demonstrated. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)