Back to Search
Start Over
X‐ray rocking curves from (100) and (111) CdTe grown on (100) GaAs by hot wall epitaxy
- Source :
- Applied Physics Letters. 55:1309-1311
- Publication Year :
- 1989
- Publisher :
- AIP Publishing, 1989.
-
Abstract
- X‐ray rocking curves of (100) and (111) oriented CdTe epilayers grown by hot wall epitaxy on (100) GaAs substrates have been measured. Our results indicate that the number of extended defects increases with thickness in (111) CdTe epilayers but decreases with thickness in (100) CdTe epilayers. The distortion of the GaAs surface induced by the CdTe epilayer is determined from comparative measurements of the rocking curve of the covered and uncovered GaAs substrate.
- Subjects :
- chemistry.chemical_classification
Materials science
Physics and Astronomy (miscellaneous)
business.industry
X-ray
Crystal growth
Substrate (electronics)
Epitaxy
Crystallographic defect
Cadmium telluride photovoltaics
Crystallography
chemistry
Optoelectronics
Thin film
business
Inorganic compound
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 55
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........1702f3058aac007e6e6f8b43636050c4