Back to Search Start Over

X‐ray rocking curves from (100) and (111) CdTe grown on (100) GaAs by hot wall epitaxy

Authors :
T. W. Ryan
K. Lischka
E. J. Fantner
H. Sitter
Source :
Applied Physics Letters. 55:1309-1311
Publication Year :
1989
Publisher :
AIP Publishing, 1989.

Abstract

X‐ray rocking curves of (100) and (111) oriented CdTe epilayers grown by hot wall epitaxy on (100) GaAs substrates have been measured. Our results indicate that the number of extended defects increases with thickness in (111) CdTe epilayers but decreases with thickness in (100) CdTe epilayers. The distortion of the GaAs surface induced by the CdTe epilayer is determined from comparative measurements of the rocking curve of the covered and uncovered GaAs substrate.

Details

ISSN :
10773118 and 00036951
Volume :
55
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........1702f3058aac007e6e6f8b43636050c4