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Design of highâspeed gate driver to reduce switching loss and mitigate parasitic effects for SiC MOSFET
- Source :
- IET Power Electronics. 10:1183-1189
- Publication Year :
- 2017
- Publisher :
- Institution of Engineering and Technology (IET), 2017.
-
Abstract
- The high switching speed in a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) will aggravate the parasitic effects (d i /d t and d v /d t ) arising from the interaction with parasitic elements. In this project, a high-speed gate driver has been developed and optimised for the commercially available SiC MOSFET power module. The impact of various parasitic parameters on parasitic effects is initially evaluated. Then, an improved gate-assisted circuit is proposed with a local low-impedance path for both discharging and C d v/ d t currents. It allows maximised turn-off speed (d v /d t up to 36 V/ns) and minimised turn-off loss (reduction up to 70%). It also produces a reduction in electromagnetic interference. The gate voltage spike due to C d v/ d t current is reduced below the threshold voltage at various testing conditions.
- Subjects :
- Materials science
business.industry
020208 electrical & electronic engineering
05 social sciences
Transistor
02 engineering and technology
Electromagnetic interference
law.invention
Threshold voltage
Switching time
chemistry.chemical_compound
chemistry
law
Power module
MOSFET
0202 electrical engineering, electronic engineering, information engineering
Electronic engineering
Gate driver
Silicon carbide
Optoelectronics
0501 psychology and cognitive sciences
Electrical and Electronic Engineering
business
050107 human factors
Subjects
Details
- ISSN :
- 17554543
- Volume :
- 10
- Database :
- OpenAIRE
- Journal :
- IET Power Electronics
- Accession number :
- edsair.doi...........170a5c5c515f8b6b721830fea681c7cf
- Full Text :
- https://doi.org/10.1049/iet-pel.2016.1009