Origin of the Concentration Quenching of Luminescence in Zn2SiO4:Mn Phosphors

Authors :: T. A. Onufrieva
I. D. Popov
M. V. Rotermel
I. V. Ivanova
N. A. Zaitseva
Rina F. Samigullina
Inna V. Baklanova
T. I. Krasnenko
Source :: Physics of the Solid State. 61:806-810
Publication Year :: 2019
Publisher :: Pleiades Publishing Ltd, 2019.
Abstract: The analysis of the unified series of single-phase Zn2 – 2xMn2xSiO4 samples (x ≤ 0.2) has provided the possibility to determine the optimal dopant concentration x = 0.13 for the maximum luminescence intensity. It has been established that the dominating mechanism of concentration luminescence quenching and excitation energy dissipation is the oxidation of some Mn2+ activating ions and the growth of defectness in the luminophore due to this process Phosphors.