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Anomalous narrow width effect in p-channel metal–oxide–semiconductor surface channel transistors using shallow trench isolation technology

Authors :
Simon T.H. Chan
Elgin Quek
Kheng-Chok Tee
K. H. Jo
Wai Shing Lau
W.K. Aw
Hyung-Rock Kim
Chee-Wee Eng
L. Chan
Kwang-Seng See
James Yong Meng Lee
Source :
Microelectronics Reliability. 48:919-922
Publication Year :
2008
Publisher :
Elsevier BV, 2008.

Abstract

For PMOS (p-channel metal–oxide–semiconductor) transistors isolated by shallow trench isolation (STI) technology, reverse narrow width effect (RNWE) was observed for large gate lengths such that the magnitude of the threshold voltage becomes smaller when the channel width decreases. However, PMOS transistors with small gate lengths show up a strong anomalous narrow width effect such that the magnitude of the threshold voltage becomes larger when the channel width decreases. We attribute such an anomalous narrow width effect to an enhancement of phosphorus and arsenic transient enhanced diffusion (TED) due to Si interstitials generated by the deep boron source/drain (S/D) implant towards the gate/STI edge.

Details

ISSN :
00262714
Volume :
48
Database :
OpenAIRE
Journal :
Microelectronics Reliability
Accession number :
edsair.doi...........1751554c2131e85f5684eecca0021618
Full Text :
https://doi.org/10.1016/j.microrel.2008.02.005