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Anomalous narrow width effect in p-channel metal–oxide–semiconductor surface channel transistors using shallow trench isolation technology
- Source :
- Microelectronics Reliability. 48:919-922
- Publication Year :
- 2008
- Publisher :
- Elsevier BV, 2008.
-
Abstract
- For PMOS (p-channel metal–oxide–semiconductor) transistors isolated by shallow trench isolation (STI) technology, reverse narrow width effect (RNWE) was observed for large gate lengths such that the magnitude of the threshold voltage becomes smaller when the channel width decreases. However, PMOS transistors with small gate lengths show up a strong anomalous narrow width effect such that the magnitude of the threshold voltage becomes larger when the channel width decreases. We attribute such an anomalous narrow width effect to an enhancement of phosphorus and arsenic transient enhanced diffusion (TED) due to Si interstitials generated by the deep boron source/drain (S/D) implant towards the gate/STI edge.
- Subjects :
- Materials science
business.industry
Transistor
Electrical engineering
chemistry.chemical_element
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
PMOS logic
law.invention
Threshold voltage
chemistry
law
Shallow trench isolation
Optoelectronics
Transient (oscillation)
Electrical and Electronic Engineering
Diffusion (business)
Safety, Risk, Reliability and Quality
business
Boron
Gunn diode
Subjects
Details
- ISSN :
- 00262714
- Volume :
- 48
- Database :
- OpenAIRE
- Journal :
- Microelectronics Reliability
- Accession number :
- edsair.doi...........1751554c2131e85f5684eecca0021618
- Full Text :
- https://doi.org/10.1016/j.microrel.2008.02.005