Correlation between morphology, chemical environment, and ferromagnetism in the intrinsic-vacancy dilute magnetic semiconductor Cr-doped Ga2Se3/Si(001)

MLA

Ezana Negusse, et al. “Correlation between Morphology, Chemical Environment, and Ferromagnetism in the Intrinsic-Vacancy Dilute Magnetic Semiconductor Cr-Doped Ga2Se3/Si(001).” Physical Review B, vol. 83, Jan. 2011. EBSCOhost, https://doi.org/10.1103/physrevb.83.045203.

APA

Ezana Negusse, Marjorie A. Olmstead, Steve M. Heald, Tracy C. Lovejoy, E. N. Yitamben, A. B. Pakhomov, Fumio S. Ohuchi, & Dario Arena. (2011). Correlation between morphology, chemical environment, and ferromagnetism in the intrinsic-vacancy dilute magnetic semiconductor Cr-doped Ga2Se3/Si(001). Physical Review B, 83. https://doi.org/10.1103/physrevb.83.045203

Chicago

Ezana Negusse, Marjorie A. Olmstead, Steve M. Heald, Tracy C. Lovejoy, E. N. Yitamben, A. B. Pakhomov, Fumio S. Ohuchi, and Dario Arena. 2011. “Correlation between Morphology, Chemical Environment, and Ferromagnetism in the Intrinsic-Vacancy Dilute Magnetic Semiconductor Cr-Doped Ga2Se3/Si(001).” Physical Review B 83 (January). doi:10.1103/physrevb.83.045203.