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Rutherford backscattering spectrometry and channeling studies on MeV Au-implanted GaAs(100) crystals
- Source :
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 129:35-41
- Publication Year :
- 1997
- Publisher :
- Elsevier BV, 1997.
-
Abstract
- Samples of GaAs(100) single crystals have been implanted with Au ++ ions of 1.43 MeV energy to a dose of ∼ 1.5 × 10 15 atoms/cm 2 at a tilted geometry. Rutherford backscattering spectrometry together with ion channeling analysis with a B ++ beam have been used to study the Au distribution and radiation damage after implantation and subsequent vacuum annealing in the temperature range of 500–850°C. The experiments reveal the existence of extensive damage (possibly an amorphous layer) in the crystal surface region and annealing up to 850°C for 30 minutes does not result in the complete recovery of the lattice order. A two component split profile of Au is observed at higher temperature annealing. Most of the Au atoms have diffused slightly towards the bulk of GaAs whereas a small fraction is diffused out towards the surface. These results suggest that the defect structure which results from ion implantation has a strong influence on the diffusion of Au. A tentative explanation for these results is presented.
Details
- ISSN :
- 0168583X
- Volume :
- 129
- Database :
- OpenAIRE
- Journal :
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Accession number :
- edsair.doi...........177ff35cd820fa265dafc97840345b8b