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Controlling Planar Defects in 3C-SiC: Ways to Wake it up as a Practical Semiconductor

Authors :
Hiroyoki Nagasawa
Maki Suemitsu
Ramya Gurunathan
Source :
Materials Science Forum. :108-114
Publication Year :
2015
Publisher :
Trans Tech Publications, Ltd., 2015.

Abstract

Eelectrically active defects in 3C–SiC are investigated by considering the structures and interactions of planar defects. An anti-phase boundary (APB) largely degrades the blocking property of semiconductor devices due to its semimetallic nature. Although APBs can be eliminated by orienting the specific polar face of 3C-SiC along a particular direction, stacking faults (SFs) cannot be eliminated due to Shockley-type partial dislocation glide. SFs with Shockley-type partial dislocations form a trapezoidal plate which expands the Si-terminated surface with increasing 3C-SiC thickness. Although the density of SFs can be reduced by counter termination, specific cross-junctions between a pair of counter SFs forms a forest dislocation, and this is regarded as an electrically active defect. This paper proposes an effective way to suppress the forest dislocations and APBs which nucleate during 3C-SiC growth.

Details

ISSN :
16629752
Database :
OpenAIRE
Journal :
Materials Science Forum
Accession number :
edsair.doi...........180708e9fdb9adc067145801c1e2fabb
Full Text :
https://doi.org/10.4028/www.scientific.net/msf.821-823.108