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Controlling Planar Defects in 3C-SiC: Ways to Wake it up as a Practical Semiconductor
- Source :
- Materials Science Forum. :108-114
- Publication Year :
- 2015
- Publisher :
- Trans Tech Publications, Ltd., 2015.
-
Abstract
- Eelectrically active defects in 3C–SiC are investigated by considering the structures and interactions of planar defects. An anti-phase boundary (APB) largely degrades the blocking property of semiconductor devices due to its semimetallic nature. Although APBs can be eliminated by orienting the specific polar face of 3C-SiC along a particular direction, stacking faults (SFs) cannot be eliminated due to Shockley-type partial dislocation glide. SFs with Shockley-type partial dislocations form a trapezoidal plate which expands the Si-terminated surface with increasing 3C-SiC thickness. Although the density of SFs can be reduced by counter termination, specific cross-junctions between a pair of counter SFs forms a forest dislocation, and this is regarded as an electrically active defect. This paper proposes an effective way to suppress the forest dislocations and APBs which nucleate during 3C-SiC growth.
- Subjects :
- Blocking (linguistics)
Materials science
Condensed matter physics
business.industry
Mechanical Engineering
Nucleation
Stacking
Semiconductor device
Condensed Matter Physics
Crystallography
Semiconductor
Planar
Mechanics of Materials
Partial dislocations
General Materials Science
Dislocation
business
Subjects
Details
- ISSN :
- 16629752
- Database :
- OpenAIRE
- Journal :
- Materials Science Forum
- Accession number :
- edsair.doi...........180708e9fdb9adc067145801c1e2fabb
- Full Text :
- https://doi.org/10.4028/www.scientific.net/msf.821-823.108