Back to Search
Start Over
Vertical GeSn/SiGeSn GAA Nanowire n-FETs with High Electron Mobility
- Source :
- 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).
- Publication Year :
- 2023
- Publisher :
- IEEE, 2023.
Details
- Database :
- OpenAIRE
- Journal :
- 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT)
- Accession number :
- edsair.doi...........180dab11bb9fa72f4d5c05d5a01f3a7c
- Full Text :
- https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134252