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Single particle dark current spikes induced in CCDs by high energy neutrons

Authors :
N. Moreau
M.J. Moutrie
R. Jones
D.B.S. King
A.M. Chugg
J.R. Armstrong
Source :
IEEE Transactions on Nuclear Science. 50:2011-2017
Publication Year :
2003
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2003.

Abstract

This paper presents an analysis of dark signal nonuniformity induced in a charge coupled device (CCD) by 90 MeV neutrons. Random telegraph signal switching between multiple levels was seen for some dark current spikes. The probability distribution of the dark current spikes is shown to be pseudo-exponential and the distribution remains exponential during annealing, but with an increasing decay constant. Similar dark current spikes were also observed to be generated in an APS device exposed to high energy neutrons at the WNR facility.

Details

ISSN :
15581578 and 00189499
Volume :
50
Database :
OpenAIRE
Journal :
IEEE Transactions on Nuclear Science
Accession number :
edsair.doi...........190adf5b1ee3fde77f1a72b48109fc6d
Full Text :
https://doi.org/10.1109/tns.2003.821813